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Proceedings Paper

Stress-induced photoluminescence in porous silicon films
Author(s): Yuan Ming Huang; Fu-fang Zhou; Bao-gai Zhai
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Paper Abstract

The influence of mechanical stresses accumulated in the thin films of porous silicon on the photoluminescence from porous silicon was investigated with micro-Raman spectroscopy. Under the 365 nm excitation, dark red photoluminescence was recorded only along the circular boundary of the silicon/porous silicon film. With micro-Raman spectroscopy, the stresses accumulated in the thin films of porous silicon were qualitatively investigated by measuring the Raman shift on a series spots along the radius of the circular porous silicon film. Our results suggested that a gradient of stress had existed in the film, and the magnitude of stresses increased along the radial direction of the film with the center to the circular film as a starting point. The stress-induced photoluminescence in porous silicon was interpreted in light of the bond-order-length-strength correlation model.

Paper Details

Date Published: 25 August 2009
PDF: 5 pages
Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73755H (25 August 2009); doi: 10.1117/12.839344
Show Author Affiliations
Yuan Ming Huang, Yunnan Normal Univ. (China)
Fu-fang Zhou, Yunnan Normal Univ. (China)
Bao-gai Zhai, Yunnan Normal Univ. (China)


Published in SPIE Proceedings Vol. 7375:
ICEM 2008: International Conference on Experimental Mechanics 2008
Xiaoyuan He; Huimin Xie; YiLan Kang, Editor(s)

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