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Proceedings Paper

Experimental investigation of p-Si (100) surface modified by ion implantation
Author(s): Z. K. Lei; X. M. Pan; Y. L. Kang; H. Yun; Z. X. Mu
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Paper Abstract

Surface strengthening and residual stress in Ti+ implanted p-Si (100) wafers are investigated by scanning electron microscopy, X-ray diffraction, nano-indentation and micro-Raman spectroscopy. The experimental results revealed that the crystallinity decreases gradually in transition area, whose structure varies continuously from the crystalline Si to amorphous phase which appears in ion implanted area. Moreover, the hardness and elastic modulus increase gradually in the transition area. Compressive intrinsic-stress that comes from lattice mismatch between the implanted layer and Si substrate is one factor giving rise to residual stresses.

Paper Details

Date Published: 25 August 2009
PDF: 4 pages
Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73755F (25 August 2009); doi: 10.1117/12.839342
Show Author Affiliations
Z. K. Lei, Dalian Univ. of Technology (China)
X. M. Pan, Dalian Univ. of Technology (China)
Y. L. Kang, Tianjin Univ. (China)
H. Yun, Shandong Univ. of Technology (China)
Z. X. Mu, Dalian Univ. of Technology (China)

Published in SPIE Proceedings Vol. 7375:
ICEM 2008: International Conference on Experimental Mechanics 2008
Xiaoyuan He; Huimin Xie; YiLan Kang, Editor(s)

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