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Proceedings Paper

The effects of passivation and temperature on the strain of Al0.22Ga0.78N /GaN heterostructuers
Author(s): K. X. Zhang; H. Y. Xie; J. N. Zhang; D. J. Chen; G. D. Wang; M. Y. Liu; A. M. Zhang
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Paper Abstract

The temperature dependencies of c-axis strain in Al0.22Ga0.78N/GaN heterostructure, with and without Si3N4 passivation layer, were investigated at temperatures from room temperature (300K) to 813K using high resolution X-ray diffraction (HRXRD). The unpassivated Al0.22Ga0.78N layers total strain decrease is about 6% and 8% for the 50-nm- and 100-nm-thick Al0.22Ga0.78N layers, respectively, at whole temperature range from 300K to 813K in our measurements. The passivated Al0.22Ga0.78N layers total strain decrease is about 12% and 0% for the 50-nm- and 100-nm-thick Al0.22Ga0.78N layers, respectively, at the whole temperature range in our measurements. And at the common devices working temperature range, after passivating, the strain increase is about 4% and 8% of the 50-nm-thick Al0.22Ga0.78N and 100-nm-thick layers with temperature from 300K to 400K and 300K to 420K, respectively. The results indicate that a reasonable passivation layer is necessary to effectively impede strain decrease of AlxGa1-xN/GaN interface at the higher temperatures and that a passivation layer is conduce to increase c-axis strain at the working temperature range, hence passivation may improve the thermal stability and electricity characteristics of AlxGa1-xN/GaN heterostructures.

Paper Details

Date Published: 25 August 2009
PDF: 5 pages
Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73754B (25 August 2009); doi: 10.1117/12.839301
Show Author Affiliations
K. X. Zhang, Hohai Univ. (China)
H. Y. Xie, Hohai Univ. (China)
J. N. Zhang, Nanjing Univ. (China)
D. J. Chen, Nanjing Univ. (China)
G. D. Wang, Hohai Univ. (China)
Nanjing Univ. (China)
M. Y. Liu, Hohai Univ. (China)
A. M. Zhang, Hohai Univ. (China)
Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 7375:
ICEM 2008: International Conference on Experimental Mechanics 2008
Xiaoyuan He; Huimin Xie; YiLan Kang, Editor(s)

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