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Proceedings Paper

Initial stage of the active mode-locking in semiconductor heterolasers
Author(s): Alexandre S. Shcherbakov; Alexey Yu. Kosarsky; Joaquin Campos Acosta; Pedro Moreno Zarate; Svetlana Mansurova
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Paper Abstract

We make an attempt to develop a novel approach to describing the initial stage of the active mode-locking in semiconductor laser structures based on analyzing the properties of dispersion relations in terms of stability for small initial perturbations. Nonlinear process of shaping optical pulses is interpreted as manifesting instability of diffusion type. For the purposes of experimental investigations, the auto-manual opto-electronic measuring system detecting average time parameters inherent in ultra-short optical pulse trains has been designed. This system is able to register auto-correlation functions of the second order exploiting the interferometric technique as well as to identify a pulsed character of the incoming light radiation. Experimental confirmations of appearing the diffusive instability within the active mode-locking process in semiconductor laser structures operating in the near infrared range are presented.

Paper Details

Date Published: 4 August 2009
PDF: 9 pages
Proc. SPIE 7386, Photonics North 2009, 73862Z (4 August 2009); doi: 10.1117/12.839296
Show Author Affiliations
Alexandre S. Shcherbakov, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Alexey Yu. Kosarsky, LLC Petro (Russian Federation)
Joaquin Campos Acosta, Institute for Applied Physics, CSIC (Spain)
Pedro Moreno Zarate, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Svetlana Mansurova, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)


Published in SPIE Proceedings Vol. 7386:
Photonics North 2009
Réal Vallée, Editor(s)

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