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Proceedings Paper

Epitaxial growth of La0.5Sr0.5MnO3 thin film and its electrical performance
Author(s): Li-qiang Xin; Xing-hua Fu; Wen-hong Tao
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Paper Abstract

Epitaxial growth behavior of the La0.5Sr0.5MnO3 thin films prepared at different annealing temperatures by Spin-Coating method on a Si(100) substrate have been studied. The thin films have a low resistivity and metallic conducting features. The results reveal that for the epitaxial growth of LSMO thin films, 800°C is the optimal annealing temperature. The structure and surface morphology of the films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The surface resistance of the films prepared with different conditions was measured by four-point dc method. Emphases are laid on the discussions of the epitaxial growth of the LSMO thin films.

Paper Details

Date Published: 25 August 2009
PDF: 6 pages
Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 73750X (25 August 2009); doi: 10.1117/12.839040
Show Author Affiliations
Li-qiang Xin, Univ. of Jinan (China)
Xing-hua Fu, Univ. of Jinan (China)
Wen-hong Tao, Univ. of Jinan (China)

Published in SPIE Proceedings Vol. 7375:
ICEM 2008: International Conference on Experimental Mechanics 2008
Xiaoyuan He; Huimin Xie; YiLan Kang, Editor(s)

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