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Proceedings Paper

Nanoscale strain analysis of an edge dislocation
Author(s): C. W. Zhao; Y. M. Xing
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Paper Abstract

The strain field of an edge dislocation in silicon was experimentally investigated. High-resolution transmission electron microscopy and geometric phase analysis were used to map the strain fields of the edge dislocation. The strain measurement results were compared with the Peierls-Nabarro dislocation model. The comparison shows that the Peierls-Nabarro model is an appropriate theoretical model to describe the strain fields of edge dislocation in silicon.

Paper Details

Date Published: 24 August 2009
PDF: 5 pages
Proc. SPIE 7375, ICEM 2008: International Conference on Experimental Mechanics 2008, 737508 (24 August 2009); doi: 10.1117/12.839009
Show Author Affiliations
C. W. Zhao, Inner Mongolia Univ. of Technology (China)
Y. M. Xing, Inner Mongolia Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7375:
ICEM 2008: International Conference on Experimental Mechanics 2008
Xiaoyuan He; Huimin Xie; YiLan Kang, Editor(s)

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