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Proceedings Paper

Experiment and device simulation for photo-electron overflow characteristics on a pixel-shared CMOS image sensor using lateral overflow gate
Author(s): Shin Sakai; Yoshiaki Tashiro; Lei Hou; Shigetoshi Sugawa
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Paper Abstract

A wide dynamic range CMOS image sensor with lateral overflow integration capacitor sharing two pixels by using lateral overflow gate (LO-gate) which directly connect the photodiode and the overflow photoelectron integration capacitor (Cs) has been developed. In this paper, the characteristics of the saturated-photoelectrons overflowing to the floating diffusion (FD) and to the Cs have been discussed through the comparison of the results of experiments and device simulations. It is possible to integrate all the saturated photoelectrons in the Cs without leaking to the shared FD by controlling the voltages of the gate electrodes of the transfer transistor and the LO-gate in the pixel which strong light irradiates. The CMOS image sensor consisting of 1/3.3 inch optical format, 3 μm pixel pitch and 1280(H) × 960(V) pixels was fabricated by a 0.18 μm 2P3M CMOS technology with a buried pinned photodiode process and has achieved 84 μV/e- photo-electric conversion gain, 6.9 × 104 e- full well capacity and 90 dB dynamic range in one exposure.

Paper Details

Date Published: 25 January 2010
PDF: 8 pages
Proc. SPIE 7536, Sensors, Cameras, and Systems for Industrial/Scientific Applications XI, 75360K (25 January 2010); doi: 10.1117/12.838765
Show Author Affiliations
Shin Sakai, Tohoku Univ. (Japan)
Yoshiaki Tashiro, Tohoku Univ. (Japan)
Lei Hou, Tohoku Univ. (Japan)
Shigetoshi Sugawa, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 7536:
Sensors, Cameras, and Systems for Industrial/Scientific Applications XI
Erik Bodegom; Valérie Nguyen, Editor(s)

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