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Proceedings Paper

Study on the optical property of P-C doped a-Si:H thin films
Author(s): Haihong Cai; Wei Li; Yadong Jiang; Yuguang Gong; Zhi Li
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Paper Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Carbon (C) were deposited by plasma enhanced chemical vapor deposition (PECVD). The influence of carbon on the optical property and the content of hydrogen and carbon in the P-doped a-Si:H films were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry and Fourier-transform infrared spectroscopy, respectively. The results show that the C-Si bonds in the P-C doped a-Si:H thin films can be observed clearly, and the content of hydrogen and carbon as well as the optical band gap increases with increasing CH4 gas flow rate, but the refractive index decreases with increasing CH4 gas flow rate in the CVD chamber.

Paper Details

Date Published: 1 December 2009
PDF: 8 pages
Proc. SPIE 7506, 2009 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments, 75062D (1 December 2009); doi: 10.1117/12.838183
Show Author Affiliations
Haihong Cai, Univ. of Electronic Science and Technology of China (China)
Wei Li, State Key Lab. of Electronic Thin Films and Integrated Devices (China)
Yadong Jiang, State Key Lab. of Electronic Thin Films and Integrated Devices (China)
Yuguang Gong, Univ. of Electronic Science and Technology of China (China)
Zhi Li, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7506:
2009 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments
Yongtian Wang; Yunlong Sheng; Kimio Tatsuno, Editor(s)

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