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Proceedings Paper

Fluorescence spectrometry of N-doped ZnO films
Author(s): X. X. He; H. Q. Li; H. X. Shen
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Paper Abstract

The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O2 to N2.The XRD and photoluminescence (PL) spectra were measured. The results show that the intensity and positions of these PL peaks are changed with nitrogen content. There are two peaks at 374nm and 391nm under fluorescence spectrum when the ratio of Ar:O2:N2 is 15:7:8. The fluorescence peak located at 374nm has the characteristic of p-type ZnO films.

Paper Details

Date Published: 23 November 2009
PDF: 5 pages
Proc. SPIE 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 75081G (23 November 2009); doi: 10.1117/12.838181
Show Author Affiliations
X. X. He, Hefei Univ. of Technology (China)
H. Q. Li, Hefei Univ. of Technology (China)
H. X. Shen, Hefei Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7508:
2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications
YanBiao Liao; Anbo Wang; Tingyun Wang; Yukihiro Ishii, Editor(s)

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