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Proceedings Paper

Poly(3-hexylthiophene) based organic field-effect transistor as NO2 gas sensor
Author(s): Bo Liu; Guangzhong Xie; Xiaosong Du
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Paper Abstract

A bottom contact organic field effect transistor (OFET) was fabricated with poly(3-hexylthiophene) (P3HT) as the channel semiconductor. P3HT thin film was deposited onto a SiO2/n-Si substrate by spin coating and electrical characteristics of the P3HT-FET were investigated in a nitrogen flux. A change in the saturation drain-source current (IDS) was observed when device was exposed to different concentrations of nitrogen dioxide (NO2) gas. It was found that the variation in the IDS was remarkable with NO2 injected in a short time.

Paper Details

Date Published: 23 November 2009
PDF: 6 pages
Proc. SPIE 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 750813 (23 November 2009); doi: 10.1117/12.837911
Show Author Affiliations
Bo Liu, Univ. of Electronic Science and Technology of China (China)
Guangzhong Xie, Univ. of Electronic Science and Technology of China (China)
Xiaosong Du, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7508:
2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications
YanBiao Liao; Anbo Wang; Tingyun Wang; Yukihiro Ishii, Editor(s)

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