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Proceedings Paper

Influence of PECVD process parameters on the etching Rate of SiNx films
Author(s): Jun Gou; Zhi-ming Wu; Hui-ling Tai; Kai Yuan
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Paper Abstract

Silicon nitride (SiNx) thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) with different process parameters (frequency, the ratio of SiH4 to NH3 gas, and the gas composition), and reactive ion etching (RIE) experiments of these SiNx thin films were carried out in order to research the relationship between PECVD process parameters and the etching rate (ER). The SiNx film properties (density, film composition and refractive index), which affected the etching rate, were also studed.

Paper Details

Date Published: 20 November 2009
PDF: 7 pages
Proc. SPIE 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications, 75100G (20 November 2009); doi: 10.1117/12.837860
Show Author Affiliations
Jun Gou, Univ. of Electronic Science and Technology of China (China)
Zhi-ming Wu, Univ. of Electronic Science and Technology of China (China)
Hui-ling Tai, Univ. of Electronic Science and Technology of China (China)
Kai Yuan, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7510:
2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications
Zhaoying Zhou; Toshio Fukuda; Helmut Seidel; Xinxin Li; Haixia Zhang; Tianhong Cui, Editor(s)

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