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Proceedings Paper

Reactive Ion Etching of Al-1%Cu alloy thin films
Author(s): Jun Gou; Zhi-ming Wu; Hui-ling Tai; Kai Yuan
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Paper Abstract

The special technical process was demaned for the reactive ion etching (RIE) of AlCu alloy thin films, such as the removal of doped Cu, the protection of sidewall and the prevention of chlorine corrosion after etching. In this paper, Al-1%Cu alloy was etched using BCl3, Cl2 and N2 gases, and CH4 was also added in the etching gases in order to enhance the sidewall protection. The process was optimized and the multi-step process were abtained. The effect of CH4 on sidewall protection was analyzed. The removal of residue after the etch was also studied.

Paper Details

Date Published: 20 November 2009
PDF: 7 pages
Proc. SPIE 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications, 75100D (20 November 2009); doi: 10.1117/12.837738
Show Author Affiliations
Jun Gou, Univ. of Electronic Science and Technology of China (China)
Zhi-ming Wu, Univ. of Electronic Science and Technology of China (China)
Hui-ling Tai, Univ. of Electronic Science and Technology of China (China)
Kai Yuan, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7510:
2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications

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