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Proceedings Paper

Study of SiNx thin film character with gas flow rate in PECVD
Author(s): Zhe Kang; Weizhi Li; Yadong Jiang
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Paper Abstract

Elements distribution, refractive index (RI) and stress of silicon nitride (SiNx) thin film under different gas flow rate conditions of plasma enhanced chemical vapor deposition (PECVD) was studied. Infrared spectrum, RI and stress of SiNx thin film were measured by infrared spectrometer, ellipsometer and stress instrument, respectively. Results showed that SiNx thin film had the lowest hydrogen Element when silane-ammonia flow rate was 1/4, and increase the flow rate of either gas would lead to more corresponding element (i.e. N in ammonia, Si in silane) and hydrogen bonds in deposited films. RI of thin film was decided by the content of nitrogen and silicon. Deposition mode was the most important factor in determining the stress of SiNx film, while in the gas-flow-rate-limited mode the stress was also lightly impacted by the content of hydrogen in the film.

Paper Details

Date Published: 20 November 2009
PDF: 8 pages
Proc. SPIE 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications, 75100B (20 November 2009); doi: 10.1117/12.837502
Show Author Affiliations
Zhe Kang, Univ. of Electronic Science and Technology of China (China)
Weizhi Li, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7510:
2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications
Zhaoying Zhou; Toshio Fukuda; Helmut Seidel; Xinxin Li; Haixia Zhang; Tianhong Cui, Editor(s)

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