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Proceedings Paper

Investigation on the performance of multi-quantum barriers in InGaN/GaN multi-quantum well light-emitting diodes
Author(s): Yeu-Jent Hu; Jiunn-Chyi Lee; Ya-Fen Wu
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Paper Abstract

We introduce a structure of multi-quantum barriers (MQBs) into the multi-quantum well (MQW) heterostructures to improve the performance in light-emitting diodes. The InGaN/GaN MQW LEDs with and without MQBs were prepared by metal-organic vapor phase epitaxy system. The electroluminescence measurements were carried out over a temperature range from 20 to 300 K and an injection current level from 10 to 100 mA. According to the experimental results of the InGaN/GaN MQW LEDs, we observe the enhancement of carrier confinement in the active layer and the inhibited carrier leakage over the barrier to the p-GaN regions for the sample with MQBs, which we attribute to the increase of effective barrier heights due to the quantum interference of the electrons within MQBs. In addition, the variations of electroluminescence external quantum efficiency as a function of injection current at various temperatures are also obtained for the samples. It is observed that the sample possessing MQBs exhibit less sensitive temperature dependence and indeed improve the radiative efficiency.

Paper Details

Date Published: 20 October 2009
PDF: 7 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 74935O (20 October 2009); doi: 10.1117/12.837319
Show Author Affiliations
Yeu-Jent Hu, Technology and Science Institute of Northern Taiwan (Taiwan)
Jiunn-Chyi Lee, Technology and Science Institute of Northern Taiwan (Taiwan)
Ya-Fen Wu, Ming Chi Univ. of Technology (Taiwan)

Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

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