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Proceedings Paper

Source-mask selection using computational lithography: further investigation incorporating rigorous resist models
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Paper Abstract

Recent publications have emphasized the criticality of computational lithography in source-mask selection for 32 and 22 nm technology nodes. Lithographers often select the illuminator geometries based on analyzing aerial images for a limited set of structures using computational lithography tools. Last year, Biafore, et al1 demonstrated the divergence between aerial image models and resist models in computational lithography. In a follow-up study2, it was illustrated that optimal illuminator is different when selected based on resist model in contrast to aerial image model. In the study, optimal source shapes were evaluated for 1D logic patterns using aerial image model and two distinct commercial resist models. Physics based lumped parameter resist model (LPM) was used. Accurately calibrated full physical models are portable across imaging conditions compared to the lumped models. This study will be an extension of previous work. Full physical resist models (FPM) with calibrated resist parameters3,4,5,6 will be used in selecting optimum illumination geometries for 1D logic patterns. Several imaging parameters - like Numerical Aperture (NA), source geometries (Annular, Quadrupole, etc.), illumination configurations for different sizes and pitches will be explored in the study. Our goal is to compare and analyze the optimal source-shapes across various imaging conditions. In the end, the optimal source-mask solution for given set of designs based on all the models will be recommended.

Paper Details

Date Published: 10 December 2009
PDF: 10 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200B (10 December 2009); doi: 10.1117/12.837201
Show Author Affiliations
Sanjay Kapasi, KLA-Tencor Corp. (United States)
Stewart Robertson, KLA-Tencor Corp. (United States)
John Biafore, KLA-Tencor Corp. (United States)
Mark D. Smith, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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