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Proceedings Paper

Feasibility studies of source and mask optimization
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Paper Abstract

In low-k1 lithography, it is difficult to keep pattern fidelity and contrast for all features in one layer. Source mask optimization (SMO) software provide solutions to keep pattern fidelity and contrast for the selected critical patterns. We have developed SMO software, and study the efficiency of the software. In this paper, we show, SMO software is effective for current 45 nm node SRAM cell layers (Active, Gate and Metal). In addition, SMO is also effective for cutting lithography technology. Cutting lithography is expected to apply 22 nm half pitch process and beyond.

Paper Details

Date Published: 10 December 2009
PDF: 10 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200C (10 December 2009); doi: 10.1117/12.837161
Show Author Affiliations
Toshiharu Nakashima, Nikon Corp. (Japan)
Tomoyuki Matsuyama, Nikon Corp. (Japan)
Soichi Owa, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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