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Proceedings Paper

After development inspection (ADI) studies of photo resist defectivity of an advanced memory device
Author(s): Hyung-Seop Kim; Yong Min Cho; Byoung-Ho Lee; Roland Yeh; Eric Ma; Fei Wang; Yan Zhao; Kenichi Kanai; Hong Xiao; Jack Jau
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Paper Abstract
In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced EBI system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges.
Paper Details
Date Published: 11 December 2009
PDF: 11 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200J (11 December 2009); doi: 10.1117/12.837103
Show Author Affiliations
Hyung-Seop Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yong Min Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byoung-Ho Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Roland Yeh, Hermes Microvision, Inc. (Taiwan)
Eric Ma, Hermes Microvision, Inc. (United States)
Fei Wang, Hermes Microvision, Inc. (United States)
Yan Zhao, Hermes Microvision, Inc. (United States)
Kenichi Kanai, Hermes Microvision, Inc. (United States)
Hong Xiao, Hermes Microvision, Inc. (United States)
Jack Jau, Hermes Microvision, Inc. (United States)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)
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