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Proceedings Paper

Monte Carlo simulation of ionized impurity scattering process in bulk silicon
Author(s): Dmitrii Speransky
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Paper Abstract

The results of Monte-Carlo simulation of ionized impurity scattering processes in doped silicon are presented. Adequacy and efficiency of the application of Ridley model to the calculation of ionized impurity scattering rates and electron mobility is proved via comparison of the simulation results with known experimental data.

Paper Details

Date Published: 17 June 2009
PDF: 5 pages
Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 737717 (17 June 2009); doi: 10.1117/12.837084
Show Author Affiliations
Dmitrii Speransky, Belarusian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 7377:
Twelfth International Workshop on Nanodesign Technology and Computer Simulations
Alexander I. Melker; Vladislav V. Nelayev, Editor(s)

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