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Proceedings Paper

Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure
Author(s): Alexander I. Kostrov; Viktor R. Stempitsky; Vladimir N. Kazimirchik
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Paper Abstract

In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

Paper Details

Date Published: 17 June 2009
PDF: 13 pages
Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 73770P (17 June 2009); doi: 10.1117/12.836973
Show Author Affiliations
Alexander I. Kostrov, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Viktor R. Stempitsky, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Vladimir N. Kazimirchik, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 7377:
Twelfth International Workshop on Nanodesign Technology and Computer Simulations
Alexander I. Melker; Vladislav V. Nelayev, Editor(s)

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