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Proceedings Paper

Pattern prediction in EUV resists
Author(s): John J. Biafore; Mark D. Smith; Tom Wallow; Patrick Nalleau; David Blankenship; Yunfei Deng
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Paper Abstract

Accurate and flexible simulation methods may be used to further a researcher's understanding of how complex resist effects influence the patterning of critical structures. In this work, we attempt to gain insight into the behavior of a state-of-the-art EUV resist through the use of stochastic resist modeling. The statistics of photon and molecule counting are discussed. The acid generation mechanism at EUV is discussed. At lambda = 13.5 nm, the acid generation mechanism may be similar to that found in electron beam resists: acid generators are hypothesized to be activated by secondary electrons yielded by ionization of the resist matrix by high-energy EUV photons, suggesting that acid generators may be activated some distance from the absorption site. A discrete, probabilistic ionization and electron scattering model for PAG conversion at EUV is discussed. The simulated effect of resist absorbance at EUV upon doseto- size and line-width roughness is shown. The model's parameterized fit to experimental data from a resist irradiated EUV are shown. Predictions of statistical resist responses such as CD distribution and line-width roughness are compared with experimental data.

Paper Details

Date Published: 11 December 2009
PDF: 13 pages
Proc. SPIE 7520, Lithography Asia 2009, 75201P (11 December 2009); doi: 10.1117/12.836910
Show Author Affiliations
John J. Biafore, KLA-Tencor (United States)
Mark D. Smith, KLA-Tencor (United States)
Tom Wallow, Global Foundries (United States)
Patrick Nalleau, Lawrence Berkeley National Lab. (United States)
David Blankenship, KLA-Tencor (United States)
Yunfei Deng, Global Foundries (United States)


Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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