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Proceedings Paper

A novel single-poly floating-gate UV sensor using standard CMOS process
Author(s): Guike Li; Yunlong Li; Peng Feng; Nanjian Wu
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Paper Abstract

This paper proposes a novel single-poly floating gate (FG) UV sensor in standard CMOS process. The sensor cell is based on PMOS FG and only adopts four transistors including sensitive component and readout amplifier. The architecture is compact and feasible for future high density array chip implementation. A theoretical analysis of sensor sensitivity is described in detail. As the sensor is compatible with standard single poly CMOS process, it has the merits of low cost, more sensitive, and be integrated with signal processing system. A prototype chip is manufactured in a 0.18μm single-poly standard CMOS logic process. The tested results indicate that the sensor is sensitive to the incoming UV irradiation.

Paper Details

Date Published: 4 August 2009
PDF: 7 pages
Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73852B (4 August 2009); doi: 10.1117/12.836786
Show Author Affiliations
Guike Li, Institute of Semiconductors (China)
Yunlong Li, Institute of Semiconductors (China)
Peng Feng, Institute of Semiconductors (China)
Nanjian Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 7385:
International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications
X.-C. Zhang; James M. Ryan; Cun-lin Zhang; Chuan-xiang Tang, Editor(s)

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