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Proceedings Paper

High speed CMOS active pixel sensors for particle imaging
Author(s): Yan Li; Yavuz Degerli; Zhen Ji; Jiang Lai
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Paper Abstract

CMOS active sensors technology has been proved to be one of the potential candidates for charged particle imaging in future high-energy experiments. Two prototypes of CMOS active pixel sensors aimed at high speed pixel detector with on-chip data sparcification are presented in this work. While having the same architecture, the two chips were developed with different CMOS processes in order to evaluate the influence of epitaxial layer thickness on charge detection performance. Thanks to the offset auto-compensation on both pixel and column level, the noise is well controlled for both two chips. Binary outputs are realized by column level auto-zeroed discriminators. Using a 55Fe radioactive source, the charge detection capability is obtained and the factors which influence charged particles detection efficiency is discussed.

Paper Details

Date Published: 6 August 2009
PDF: 7 pages
Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73842P (6 August 2009); doi: 10.1117/12.836557
Show Author Affiliations
Yan Li, Shenzhen Univ. (China)
Yavuz Degerli, IRFU/CEA Saclay (France)
Zhen Ji, Shenzhen Univ. (China)
Jiang Lai, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 7384:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications
Kun Zhang; Xiang-jun Wang; Guang-jun Zhang; Ke-cong Ai, Editor(s)

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