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Proceedings Paper

Simulation of doping concentration and working temperature for MCT photodiode detector design
Author(s): Ya-fang Tian; Yan-li Shi; Fan Li
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Paper Abstract

Hg1-xCdxTe (MCT) Photovoltaic Detector is a very important detector for the second-Generation and third-Generation infrared Focal Plane Array (FPA) detectors. Zero-bias resistance-area products (R0A) is an important factor of detector's performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device simulation software, both current-voltage characteristic and R0A products of n-on-p MCT Photovoltaic Detector with x = 0.223 had been simulated and analyzed with varying implantation dose and working temperature in the voltage range of -0.3V~0V. The stimulated results indicated that dark current and R0A products depended distinctly upon the doping concentration and working temperature of photovoltaic detectors, and the optimal doping concentration and appropriate working temperature were obtained for n-on-p MCT Photovoltaic Detector.

Paper Details

Date Published: 6 August 2009
PDF: 8 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73833R (6 August 2009); doi: 10.1117/12.836531
Show Author Affiliations
Ya-fang Tian, Kunming Univ. of Science and Technology (China)
Kunming Institute of Physics (China)
Yan-li Shi, Kunming Institute of Physics (China)
Fan Li, Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications

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