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Proceedings Paper

The effect of nitrogen doping on the multiple-pulse subpicosecond dielectric breakdown of hafnia films
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Paper Abstract

A film of hafnium oxide, doped with 5 atomic % nitrogen, was prepared by dual-ion-beam-assisted deposition. The properties were compared to a pure hafnium oxide film. The damage threshold is lower for the nitrogen-doped film. However, the multiple-pulse damage threshold for a 1 kHz train of 800 fs pulses shows no drop relative to the singlepulse value. These results are discussed within the context of a multiple-damage model, based on midgap trapping states.

Paper Details

Date Published: 31 December 2009
PDF: 6 pages
Proc. SPIE 7504, Laser-Induced Damage in Optical Materials: 2009, 750402 (31 December 2009); doi: 10.1117/12.836504
Show Author Affiliations
D. N. Nguyen, The Univ. of New Mexico (United States)
L. A. Emmert, The Univ. of New Mexico (United States)
W. Rudolph, The Univ. of New Mexico (United States)
D. Patel, Colorado State Univ. (United States)
E. Krous, Colorado State Univ. (United States)
C. S. Menoni, Colorado State Univ. (United States)


Published in SPIE Proceedings Vol. 7504:
Laser-Induced Damage in Optical Materials: 2009
Gregory J. Exarhos; Vitaly E. Gruzdev; Detlev Ristau; M. J. Soileau; Christopher J. Stolz, Editor(s)

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