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Proceedings Paper

Growth of self-standing GaN substrates
Author(s): Hyun-Jae Lee; Katsushi Fujii; Takenari Goto; Chinkyo Kim; Jiho Chang; Soon-Ku Hong; Meoungwhan Cho; Takafumi Yao
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Paper Abstract

Large-sized and high-quality free standing GaN are required with the development of GaN-based devices. We have developed new techniques to reduce the price of GaN substrates. In this paper, we introduce a simple fabrication way of freestanding GaN substrate using hydride vapor phase epitaxy (HVPE). An evaporable buffer layer was applied for the fabrication of 2inch freestanding GaN to separate from a sapphire substrate, in other words, a freestanding GaN was fabricated only by HVPE (one-stop process) without any process.

Paper Details

Date Published: 11 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760202 (11 March 2010); doi: 10.1117/12.836337
Show Author Affiliations
Hyun-Jae Lee, Tohoku Univ. (Japan)
Katsushi Fujii, Tohoku Univ. (Japan)
Takenari Goto, Tohoku Univ. (Japan)
Chinkyo Kim, Kyunghee Univ. (Korea, Republic of)
Jiho Chang, Korea Maritime Univ. (Korea, Republic of)
Soon-Ku Hong, Chungnam National Univ. (Korea, Republic of)
Meoungwhan Cho, Wavesquare Inc. (Korea, Republic of)
Takafumi Yao, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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