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Proceedings Paper

Effects of thermal oxidation interfacial layer on the photoelectrical properties of GaN-based Schottky diodes
Author(s): Kai-hui Chu; Chao Li; Yong-gang Yuan; Xiang-yang Li
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Paper Abstract

Thermal oxidation interfacial layer was inserted into the GaN-based material and Schottky contact interface during the device preparation to increase the barrier height. Different thickness of thermal oxidation interfacial layer was created by keeping the chips in the Rapid Thermal Processor (RTP) in atmosphere ambient for different periods of time before evaporating transparent Schottky contact. For GaN Schottky diodes, as the time kept in RTP increases, the diodes' zero-bias resistances decrease and the dark current increase considerably, and the peak photoresponse and UV-visible rejection factor of the responsivity of the diodes decrease abruptly. For Al0.45Ga0.55N Schottky diodes, as the time increase, the diodes' zero-bias resistances and dark current increase slightly, while the peak photoresponse and the UV/visible rejection factor of the responsivity of the diodes decrease a little.

Paper Details

Date Published: 24 August 2009
PDF: 9 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738123 (24 August 2009); doi: 10.1117/12.836284
Show Author Affiliations
Kai-hui Chu, Shanghai Institute of Technical Physics (China)
Chao Li, Shanghai Institute of Technical Physics (China)
Yong-gang Yuan, Shanghai Institute of Technical Physics (China)
Xiang-yang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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