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Proceedings Paper

Laser induced damage of sapphire and titanium doped sapphire crystals under femtosecond to nanosecond laser irradiation
Author(s): B. Bussière; O. Utéza; N. Sanner; M. Sentis; G. Riboulet; L. Vigroux; M. Commandré; F. Wagner; J.-Y. Natoli; J.-P. Chambaret
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Paper Abstract

The use of large Ti:Sapphire crystals in ultra fast high peak power laser amplifiers makes crucial the problem of crystal laser induced damage. These works aim to quantify the laser induced damage threshold (LIDT) of Sapphire and Ti:Sapphire crystals under femtosecond, picosecond and nanosecond laser pulse irradiations, which are typically encountered in such laser chains. Furthermore, a study of the influence of cryogenic conditions on the LIDT of Ti:Sapphire crystals and of their anti-reflection coating has been performed. The results are important to understand the mechanisms leading to the damage, and to reveal the key parameters which will have to be optimized in future high peak power laser chains.

Paper Details

Date Published: 31 December 2009
PDF: 9 pages
Proc. SPIE 7504, Laser-Induced Damage in Optical Materials: 2009, 75041N (31 December 2009); doi: 10.1117/12.836191
Show Author Affiliations
B. Bussière, LP3 Pôle Scientifique et Technologique de Luminy (France)
Amplitude Technologies (France)
Institut Fresnel, CNRS, Univ. Aix Marseille (France)
O. Utéza, LP3 Pôle Scientifique et Technologique de Luminy (France)
N. Sanner, LP3 Pôle Scientifique et Technologique de Luminy (France)
M. Sentis, LP3 Pôle Scientifique et Technologique de Luminy (France)
G. Riboulet, Amplitude Technologies (France)
L. Vigroux, Amplitude Technologies (France)
M. Commandré, Institut Fresnel, CNRS, Univ. Aix Marseille (France)
F. Wagner, Institut Fresnel, CNRS, Univ. Aix Marseille (France)
J.-Y. Natoli, Institut Fresnel, CNRS, Univ. Aix Marseille (France)
J.-P. Chambaret, Ecole Nationale Supérieure de Techniques Avancées (France)


Published in SPIE Proceedings Vol. 7504:
Laser-Induced Damage in Optical Materials: 2009
Gregory J. Exarhos; Vitaly E. Gruzdev; Detlev Ristau; M. J. Soileau; Christopher J. Stolz, Editor(s)

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