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Proceedings Paper

Spin-dependent transport of electrons through ferromagnetic/insulator/semiconductor nanostructures
Author(s): Tatiana N. Sidorova; Alexander L. Danilyuk; Vviktor E. Borisenko; F. Arnaud d'Avitaya; J.-L. Lazzari
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Paper Abstract

The model of spin-dependent electron transport through ferromagnetic/insulator/semiconductor nanostructures was developed on the basis of the transport equation accounting for carrier scattering and the image forces at the interfaces. Modeling was performed for Co/Al2O3/p-Si and CoFe/MgO/n-Si nanostructures. Tunneling magnetoresistance was modeled to be 7-13 % in Co/Al2O3/p-Si nanostructures biased in range from 0.7 to 2.0 V. A scattering well in the collector region was shown to increase the tunneling magnetoresistance by 4-5 %. In CoFe/MgO/n-Si nanostructures the tunneling magnetoresistance varivaries from 5 to 50% when the external bias is ranged from 0.1 to 2 V.

Paper Details

Date Published: 17 June 2009
PDF: 6 pages
Proc. SPIE 7377, Twelfth International Workshop on Nanodesign Technology and Computer Simulations, 737708 (17 June 2009); doi: 10.1117/12.836170
Show Author Affiliations
Tatiana N. Sidorova, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Alexander L. Danilyuk, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Vviktor E. Borisenko, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
F. Arnaud d'Avitaya, Ctr. Interdisciplinaire de Nanoscience de Marseille (France)
J.-L. Lazzari, Ctr. Interdisciplinaire de Nanoscience de Marseille (France)


Published in SPIE Proceedings Vol. 7377:
Twelfth International Workshop on Nanodesign Technology and Computer Simulations
Alexander I. Melker; Vladislav V. Nelayev, Editor(s)

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