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Proceedings Paper

Photo-excited carrier density in short-period InAs/GaSb type-II superlattice
Author(s): Fan Li; Wen Xu; Yan-li Shi
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Paper Abstract

We present a systematic theoretical study on optical properties of short-period InAs/GaSb type-II superlattices (SLs) which can serve for Mid-Infrared (MIR) detection. From the energy dispersion relation for the electron derived from using the standard Kronig-Penney model we calculate the electron-minibands structure in InAs layer and the hole-minibands structure in GaSb layer of such SLs. The obtained band-gap energies are in line with those realized experimentally. On the basis of the mass-balances equations derived from the Boltzmann equation, at the same time considering the polarization direction of the infrared irradiation vertical to the growth direction of the material, we develop an approach to calculate the Fermi level and photo-excited carrier density in the corresponding SL systems. The dependence of photo-conductivity in InAs/GaSb type-II SLs on temperature and well-widths are examined. This study is pertinent to the application of InAs/GaSb type-II SLs as uncooled MIR photodetectors.

Paper Details

Date Published: 4 August 2009
PDF: 10 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831T (4 August 2009); doi: 10.1117/12.835942
Show Author Affiliations
Fan Li, Kunming Institute of Physics (China)
Wen Xu, Institute of Solid State Physics (China)
Yan-li Shi, Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications
Jeffery Puschell; Hai-mei Gong; Yi Cai; Jin Lu; Jin-dong Fei, Editor(s)

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