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Proceedings Paper

Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology
Author(s): P. Parisi; A. Mani; C. Perry-Sullivan; J. Kopp; G. Simpson; M. Renis; M. Padovani; C. Severgnini; P. Piacentini; P. Piazza; A. Beccalli
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Paper Abstract

After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

Paper Details

Date Published: 14 December 2009
PDF: 12 pages
Proc. SPIE 7520, Lithography Asia 2009, 75201W (14 December 2009); doi: 10.1117/12.835839
Show Author Affiliations
P. Parisi, KLA-Tencor Corp. (United States)
A. Mani, KLA-Tencor Corp. (United States)
C. Perry-Sullivan, KLA-Tencor Corp. (United States)
J. Kopp, KLA-Tencor Corp. (United States)
G. Simpson, KLA-Tencor Corp. (United States)
M. Renis, Numonyx R2 Technology Ctr. (Italy)
M. Padovani, Numonyx R2 Technology Ctr. (Italy)
C. Severgnini, Numonyx R2 Technology Ctr. (Italy)
P. Piacentini, Numonyx R2 Technology Ctr. (Italy)
P. Piazza, Numonyx R2 Technology Ctr. (Italy)
A. Beccalli, Numonyx R2 Technology Ctr. (Italy)


Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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