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Proceedings Paper

High frame rate PtSi CCD infrared sensors
Author(s): Xue-tao Weng; Zhun-lie Tang
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Paper Abstract

By using 2μm design rule and silicon technology, PtSi128×128 high frame rate (500frame/second) progressive scan CCD devices has been designed, fabricated and applied. The CCD devices is of vertical 3 phases, horizontal 4 phases,3 level ,interline transfer and optimized optical cavity configuration. The pixel number is 128×128.The pixel size is 30×30 μm2.The factor of fulfill is about 27%. The guard ring is designed as 3μm. The interlace between guard ring and platinum silicide zone is 1μm. The channel stop is 2μm .The collection diode is 4.5×5μm2.The barrier between vertical CCD and platinum silicide is 3×5μm2.The width of vertical CCD is 9μm. The vertical super notch is not adopted. But accessional phosphorus ion is implanted in order to enhance charge capacity. The interlace between vertical 3 phases poly silicon is 1μm. The vertical clock frequency is 62.5 KHz. The width of horizontal CCD is 40μm. The notch is 3μm .It is selectable. The interlace between 4 phases poly silicon is also 1μm. The 4 phases poly silicon is fabricated by 3 layer poly silicon because of vertical 3 phases. The horizontal clock frequency is 10 MHz. The configuration of output amplifier is two stage source follower amplifier. LDD is adopted. The bandwidth of output amplifier is designed as 40 MHz. The sensitive of output amplifier is 4 μv/e. 90nm gate oxide and 70nm nitride layers are fabricated first. Than LOCOS,B diffusion, Buried channel, Notch(selectable), VCCD, Barrier, Channel stop, Poly1,Poly2,Poly3,Collecton diode, Guard ring, Source and drain, Platinum silicide , hole, aluminium are orderly fabricated. Parameter test is under 500 frame/second .NETD is 0.6K.Dynamic range is 64dB.Non-uniformity is 0.7%(corrected).The number of defect is zero.

Paper Details

Date Published: 6 August 2009
PDF: 9 pages
Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73841X (6 August 2009); doi: 10.1117/12.835713
Show Author Affiliations
Xue-tao Weng, Chongqing Opto-electric Technology Research Instititute (China)
Zhun-lie Tang, Chongqing Opto-electric Technology Research Instititute (China)


Published in SPIE Proceedings Vol. 7384:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications
Kun Zhang; Xiang-jun Wang; Guang-jun Zhang; Ke-cong Ai, Editor(s)

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