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Proceedings Paper

Characterization of doped ZnCdTe crystals as THz emitters
Author(s): Xiu-min Wang; Yu-lei Shi; Yu-ping Yang
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Paper Abstract

Characterization of doped ZnCdTe crystals as terahertz (THz) emitters is studied in detail. By measuring the absorption of THz wave and analyzing the phase matching condition in these crystals, it is found that the dispersion property of crystals and the self-absorption of THz waves in these crystals play important roles in THz radiation. It is also found that the direct current (DC) resistivity of the crystal for THz emitter application should be greater than 106Ωcm. The THz generation efficiency increases as their DC resistivity increases, but the efficiency saturates and even declines when the resistivity goes beyond 106Ωcm.

Paper Details

Date Published: 5 August 2009
PDF: 8 pages
Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738507 (5 August 2009); doi: 10.1117/12.835695
Show Author Affiliations
Xiu-min Wang, Beijing Univ. of Civil Engineering and Architecture (China)
Yu-lei Shi, Capital Normal Univ. (China)
Yu-ping Yang, Minzu Univ. of China (China)


Published in SPIE Proceedings Vol. 7385:
International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications
X.-C. Zhang; James M. Ryan; Cun-lin Zhang; Chuan-xiang Tang, Editor(s)

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