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Proceedings Paper

Activation experiment of exponential-doping NEA GaAs photocathodes
Author(s): Jijun Zou; Gangyong Lin; Xiong Wei; Lin Feng; Zhi Yang; Benkang Chang
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Paper Abstract

An exponential-doping GaAs photocathode was designed and activated, the achieved integral sensitivity for the exponential-doping cathode is 1956μA/lm, which is much higher than that of gradient-doping cathode with identical thickness of epitaxial layer. According to the quantum efficiency theory of exponential-doping cathode, we analyzed the reason responsible for the increase in integral sensitivity of exponential-doping cathode, which are mainly attributed to the invariable induced electric field, the photoelectrons driven by the field move towards the cathode surface by way of diffusion and drift. Accordingly, increase the average distance that photoelectrons transport and reduce the influence of the back-interface recombination velocity on photoemission.

Paper Details

Date Published: 6 August 2009
PDF: 6 pages
Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73841L (6 August 2009); doi: 10.1117/12.835586
Show Author Affiliations
Jijun Zou, East China Institute of Technology (China)
Nanjing Univ. of Science & Technology (China)
Gangyong Lin, East China Institute of Technology (China)
Xiong Wei, East China Institute of Technology (China)
Lin Feng, East China Institute of Technology (China)
Zhi Yang, Nanjing Univ. of Science & Technology (China)
Benkang Chang, Nanjing Univ. of Science & Technology (China)


Published in SPIE Proceedings Vol. 7384:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications
Kun Zhang; Xiang-jun Wang; Guang-jun Zhang; Ke-cong Ai, Editor(s)

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