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Proceedings Paper

Study on the preparation of vanadium oxide thin films by the metal-oxygenation method
Author(s): Tao Chen; Ming Hu; Ji-ran Liang; Jia-ning Lu; Lei Tan
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Paper Abstract

Vanadium thin films were deposited on silicon nitride substrates by direct current facing targets magnetron sputtering, and then were annealed in room air ambient to form the vanadium oxide(VOx) thin films. The VOx thin films made by this way have high TCR(Temperature Coefficient of Resistance) near room temperature. Compared with reactive sputtering[1,2], the metal-oxygenation method needs fewer preparative parameters which are very easy to control. The main target of this paper is to study the electrical property of the VOx thin films, especially the relationship between the TCR of VOx thin films and their preparative parameters. Orthogonal experiment was used to choose optimal preparative parameters, which include sputtering pressure, sputtering time, annealing time and annealing temperature. Then the resistance-temperature property was measured, and the results show that the VOx thin film which was prepared after sputtered at 1.5 Pa for 20 minutes at room temperature and annealed at 400°C for 1.5h has the best resistance-temperature property. And near room temperature, its TCR is -3.25%/K, which is twice as much as that of metal material. And the VOx thin film has potential application in uncooled infrared microbolometer[3~5].

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738117 (24 August 2009); doi: 10.1117/12.835581
Show Author Affiliations
Tao Chen, Tianjin Univ. (China)
Ming Hu, Tianjin Univ. (China)
Ji-ran Liang, Tianjin Univ. (China)
Jia-ning Lu, Tianjin Univ. (China)
Lei Tan, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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