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Proceedings Paper

Optical switching properties of VOx thin films deposited on Si3N4 substrates using ion beam sputtering
Author(s): Jianing Lu; Ming Hu; Jiran Liang; Tao Chen; Lei Tan
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Paper Abstract

Vanadium dioxide (VO2) thin films, for their property of metal-insulator transition (MIT), have drawn many researchers' attention on optical devices study. Nowadays it is complicated to fabricate single-phase VO2) thin films. Ion beam sputtering is adopted to deposit VOx thin films (main component is VO2) ) on Si3N4, while sputtering power, substrate temperature and partial oxygen pressure of VOx are adjusted. Then annealing technology is utilized to improve the parameter property of VOx thin films. The thin films are tested by AFM, XPS, XRD, Fourier transform infrared spectrometry, tunable semiconductor laser and optical power meter. Both temperature-driven phasetransition and photoexcitation phasetransition of VOx thin films are applied. The samples are heated from 20°C to 80°C, discovering that the phasetransition temperature is about 59°C and the value of resistance before the phasetransition is two orders of magnitude over the value of resistance after the phasetransition. At the wavelength of 1550 nm, the transmission is from 32% to 1%. Besides, the extinction ratio of the thin films sample is obtained. The optical properties show that the VOx thin films have an apparent switching effect in the optical communication fields.

Paper Details

Date Published: 24 August 2009
PDF: 8 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738118 (24 August 2009); doi: 10.1117/12.835579
Show Author Affiliations
Jianing Lu, Tianjin Univ. (China)
Ming Hu, Tianjin Univ. (China)
Jiran Liang, Tianjin Univ. (China)
Tao Chen, Tianjin Univ. (China)
Lei Tan, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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