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Proceedings Paper

Preparation and photoelectric properties of a thin-film nanocrystalline diamond phototransistor
Author(s): Qian Fang; Linjun Wang; Qingkai Zeng; Jian Huang; Jijun Zhang; Run Xu; Weimin Shi; Yiben Xia
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Paper Abstract

P-type hydrogenated nanocrystalline diamond (NCD) film on silicon substrate was realized by microwave plasma chemical vapor deposition (MPCVD) method followed by hydrogen plasma treatment. And then a metal-semiconductor field-effect transistor (MESFET), where ohmic contacts as source and drain were formed by depositing gold and Schottky gate contact with a gate length Lg of 10 μm was formed by depositing metal aluminium, was successfully fabricated with surface p-channel based on the above NCD film. Atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) were applied to characterize the structure and the surface morphology of the hydrogenated NCD film. The drain source current-voltage (IDS-VDS) characteristics showed enhancement mode operation of the surface p-channel MESFET could be obtained despite the Al gate was crossing many grain boundaries. And a maximum channel current IDS (max) = 25.8 μA at VGS= -2.0 V with VDS = -10 V, were obtained.

Paper Details

Date Published: 24 August 2009
PDF: 6 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811N (24 August 2009); doi: 10.1117/12.835508
Show Author Affiliations
Qian Fang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Qingkai Zeng, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Jijun Zhang, Shanghai Univ. (China)
Run Xu, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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