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Proceedings Paper

The fabrication of a 128×128 solar-blind AlGaN p-i-n back-illuminated ultraviolet photodetector array
Author(s): Tingjing Yan; Ming Chong; Degang Zhao; Shuang Zhang; Lianghui Chen
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Paper Abstract

128×128 pixels AlGaN solar blind ultraviolet photodetector arrays have been designed and fabricated. The diameter of each pixel is 44μm with a 50μm pitch. They are photosensitive in the waveband of 225~255nm, with the peak sensitivity at 246nm. The back-illuminated p-i-n heterojunction structure has been grown on transparent sapphire substrate using MOCVD, the aluminum composition of AlxGa1-xN n-type window layer was 71%, and the alloy composition of the unintentionally doped (UID) absorber layer was 52%. The dark current measured at a bias voltage close to zero is 27 pA, and the photocurrent is 2.7 nA at the incidence optical power of 0.12 mW in a wavelength of 246 nm, corresponding to a peak responsivity of 23mA/W.

Paper Details

Date Published: 5 August 2009
PDF: 6 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831Q (5 August 2009); doi: 10.1117/12.835502
Show Author Affiliations
Tingjing Yan, Institute of Semiconductors (China)
Ming Chong, Institute of Semiconductors (China)
Degang Zhao, Institute of Semiconductors (China)
Shuang Zhang, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications
Jeffery Puschell; Hai-mei Gong; Yi Cai; Jin Lu; Jin-dong Fei, Editor(s)

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