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Proceedings Paper

Electrical characteristics of CuS/ZnO PN heterojunction
Author(s): Xuemin Qian; Jianxing Fang; Yinglin Song
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Paper Abstract

A large area of N-ZnO/P-CuS junction arrays on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The thicknesses of CuS shell are tuned by controlling the times of layer-by-layer deposition cycle. Three samples with different CuS shell thicknesses are fabricated and their J-V characteristics show good rectification behavior. The threshold voltages are about 2.5 V at the voltage scans of ± 3 V. The field emission properties of three samples are inveatigated. The turn-on fields of three samples are 6.15 V/μm, 8.75 V/μm, and 10.59 V/μm, respectively. The threshold fields of three samples are 10.46 V/μm, 13.71 V/μm, and 15.2 V/μm, respectively.

Paper Details

Date Published: 24 August 2009
PDF: 8 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738126 (24 August 2009); doi: 10.1117/12.835498
Show Author Affiliations
Xuemin Qian, Suzhou Univ. (China)
Jianxing Fang, Suzhou Univ. (China)
Yinglin Song, Suzhou Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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