Share Email Print
cover

Proceedings Paper

Investigation of GaN-based avalanche photodiodes
Author(s): Ling Wang; Jingtong Xu; Yonggang Yuan; Peilu Jiang; Yan Zhang; Xiangyang Li
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

GaN-based avalanche photodiodes (APDs) have become of increased interest in the UV detection arenas. However, numerous material-, fabrication-, and design-related problems are exactly settled before GaN-based APDs can be commercialized. In this study, we, first, discussed recent development of the GaN-based APDs. Then front- and back-illumination (respectively realizing electron and hole initial impact-ionization) p-i-n heterostructure devices with various mesa diameters were fabricated. The device with a diameter of 40 μm exhibited a multiplication gain of ~680, at reverse bias of ~76 V corresponding to the magnitude of the electric field of ~ 3 MV/cm by experiment indicating and simulation verifying. To confirm the origin of dark current under different reverse bias, the dark current-voltage characteristic of various sized mesa devices were performed. The dark current could be linearly fitted to the device diameter (or circumference) implied that the surface leakage along the mesa sidewall was the dominant component of the dark current. At zero bias, the spectral peak responsivity reached ~ 0.14A/W for front illumination, and ~ 0.152A/W for back illumination at a wavelength of 358 nm. The positive breakdown voltage coefficient from the temperature-dependent current-voltage characteristics was 0.02 V/K.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810Y (24 August 2009); doi: 10.1117/12.835325
Show Author Affiliations
Ling Wang, Shanghai Institute of Technical Physics (China)
Jingtong Xu, Shanghai Institute of Technical Physics (China)
Yonggang Yuan, Shanghai Institute of Technical Physics (China)
Peilu Jiang, Shanghai Institute of Technical Physics (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top