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Proceedings Paper

Impact of B-site Hf4+-doping on the structural and ferroelectric properties of Bi4Ti3O12 thin films
Author(s): Yu Zhang; Changming Zuo; Xiaoping Wang; Jun Zhu; Hong Ji
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Paper Abstract

Hf 4+ -doped and undoped (028)-oriented Bi4Ti 3O12 ferroelectric films with the same thickness have been deposited on two SrRuO3 -covered (111)-oriented SrTiO3 substrates by pulsed laser deposition (PLD). The structures of the two films were studied by x-ray diffraction (XRD). It was found that the Hf4+ ion doped at site B has greatly improved the remnant polarization and fatigue property. That because the Hf4+ ion has changed the structure of Hf4+ -doped Bi 4 Ti 3 O12 film a lot including a tensile strain along a axis, a triple-domain structure and distortion of oxygen octahedral which result in an increase of the remnant polarization. And the triple-domain structure and the reduction of oxygen vacancies also caused by Hf4+ ion doping improved the fatigue property.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738107 (24 August 2009); doi: 10.1117/12.835284
Show Author Affiliations
Yu Zhang, Univ. of Electronic Science and Technology of China (China)
Changming Zuo, Univ. of Electronic Science and Technology of China (China)
Xiaoping Wang, Univ. of Electronic Science and Technology of China (China)
Jun Zhu, Univ. of Electronic Science and Technology of China (China)
Hong Ji, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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