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Proceedings Paper

The electrical properties and defect levels of Al doped CdZnTe crystal for detector applications
Author(s): Wanqi Jie; Gangqiang Zha
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Paper Abstract

CdZnTe (CZT) is one of the most promising materials for room-temperature X-ray and Gamma-ray detectors. The electrical properties of CZT crystal decide the performance of CZT detector to a large degree. For high quality CZT crystal using as detector, both high resistivity and high carrier transport properties are necessary. In this paper, the electrical properties and defect levels of Al-doped CZT (CZT:Al) crystal were discussed. Utilizing the thermally stimulated current (TSC) spectroscope measurement, the defect levels in CZT:Al crystal and their level-model were determined and inferred. The carrier transport properties of the CZT:Al were charactered with the carrier mobility-lifetime (μτ) products determined by the peak channel of241Am alpha particle 5.48 MeV spectrum as a function of the bias voltage. Fitted by the single carrier Hecht equation, the μτ for the electron was evaluated to be 4.6×10-4 cm2·V-1.

Paper Details

Date Published: 4 August 2009
PDF: 7 pages
Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73850U (4 August 2009); doi: 10.1117/12.835264
Show Author Affiliations
Wanqi Jie, Northwestern Polytechnical Univ. (China)
Gangqiang Zha, Northwestern Polytechnical Univ. (China)


Published in SPIE Proceedings Vol. 7385:
International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications
X.-C. Zhang; James M. Ryan; Cun-lin Zhang; Chuan-xiang Tang, Editor(s)

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