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Proceedings Paper

The research on the surface structure and conductivity of free-standing diamond films for photo-transistor applications
Author(s): Yi Zhang; Qi Xiao; Lin-jun Wang; Qing-kai Zeng; Jian Huang; Ke Tang; Ji-jun Zhang; Jia-hua Min; Wei-min Shi; Yi-ben Xia
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Paper Abstract

Free-standing polycrystalline diamond films with a thickness of about 200 μm were grown by microwave plasma chemical vapor deposition (MPCVD) method. Raman spectra indicated high quality diamond film of the nucleation surface. AFM result indicated the nucleation surface was quite smooth with a mean surface roughness (RMS) of about 10 nm. The sheet carrier densities and sheet resistivities of hydrogenated nucleation surfaces of diamond film under different annealing temperatures were investigated by Hall effect measurement. The sheet carrier density and sheet resistivity remained in a relatively stable range until the annealing temperature above 200 ºC, and the sheet carrier density dropped drastically and sheet resistivity rose sharply, achieving a sharp change at an annealing temperature of 250 °C. The ultra-violet Raman spectra and infrared spectra showed CHx stretching modes at the hydrogenated nucleation surface, whereas almost little hydrogen incorporation on annealed sample.

Paper Details

Date Published: 24 August 2009
PDF: 6 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811M (24 August 2009); doi: 10.1117/12.835258
Show Author Affiliations
Yi Zhang, Shanghai Univ. (China)
Qi Xiao, Shanghai Univ. (China)
Lin-jun Wang, Shanghai Univ. (China)
Qing-kai Zeng, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Ji-jun Zhang, Shanghai Univ. (China)
Jia-hua Min, Shanghai Univ. (China)
Wei-min Shi, Shanghai Univ. (China)
Yi-ben Xia, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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