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Proceedings Paper

Performance of 128x128 solar-blind AlGaN ultraviolet focal plane arrays
Author(s): Yongang Yuan; Yan Zhang; Dafu Liu; Kaihui Chu; Ling Wang; Xiangyang Li
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Paper Abstract

Ozone layer intensively absorbs 240nm to 285 nm incidence, when the sunshine goes through stratospheric. There is almost no UVC (200nm-280nm) band radiation existing below stratospheric. Because the radiation target presents a strong contrast between atmosphere and background, solar-blind band radiation is very useful. Wide band gap materials, especially III-V nitride materials, have attracted extensive interest. The direct band gap of GaN and A1N is 3.4 and 6.2 eV, respectively. Since they are miscible with each other and form a complete series of AlGaN alloys, AlGaN has direct band gaps from 3.4 to 6.2 eV, corresponding to cutoff wavelengths from 365 to 200 nm. A back-illuminated hybrid FPA has been developed by Shanghai Institute of Technical Physics Chinese Academy of Science. This paper reports the performance of the 128x128 solar-blind AlGaN UV Focal Plane Arrays (FPAs). More and more a CTIA (capacitivetransimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The bared readout circuit was first tested to find out optimal analog reference voltage. Second, this ROIC was tested in a standard 20-pin shielded dewar at 115 K to 330K. Then, a new test system was set up to obtain test UV FPA noise, swing voltage, data valid time, operating speed, dynamic range, UV response etc. The results show that 128x128 back-illuminated AlGaN PIN detector SNR is as high as 74db at the speed of above30 frame per second. Also, some noise test method is mentioned.

Paper Details

Date Published: 24 August 2009
PDF: 9 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810I (24 August 2009); doi: 10.1117/12.835245
Show Author Affiliations
Yongang Yuan, Shanghai Institute of Technical Physics (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Dafu Liu, Shanghai Institute of Technical Physics (China)
Kaihui Chu, Shanghai Institute of Technical Physics (China)
Ling Wang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors

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