Share Email Print
cover

Proceedings Paper

Excimer pulsed laser deposition of diamond-like carbon films
Author(s): Yanlong Guo; Shuyun Wang; Xiaobing Wang; Yong Cheng; Huisheng Wang; Bin Sun
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hydrogen-free Diamond-like Carbon(DLC) films onto silicon wafer are deposited by pulsed laser deposition(PLD) at a substrate temperature of 25 °C in vacuum. The laser source used was an 20 ns KrF excimer laser beam with the wavelength of 248 nm and maximum laser energy of 600 mJ at a repetition rate of 10Hz. The laser intensity used vary from 1.02×109W/cm2 to 2.24×109W/cm2. Infrared transittance, Raman spectroscopy and nano-hardness are used to analyze the comprehensive performance of the films, and the results show that the film deposited at laser intensity of 1.28×109W/cm2 is the best among other films. This can be explained well by that the carbon ion energy at laser intensity of 1.28×109W/cm2 is suitable to form sp3 bonds than sp2 bonds. If carbon ion energy is too low, it has not enough energy to from sp3 bonds. While, if carbon ion energy is too high, extra energy will transfer sp3 bonds to sp2 bonds. Raman spectrum measurement showed a unsymmetrical broad peak with a center at 1550 cm-1 for all films. The ID/IG calculated by Gaussian fit of Raman spectrum is as low as 0.44. There are few graphite particles on these DLC films. The nano-hardness of DLC films is relatively high. The DLC films improve Silicon wafers' anti-scratch performance efficiently. The DLC films are scratched 100000 times under 9.8N press on RS-5600 films scratch machine, no nick is observed after scratch. The highest IR transmittance between 3 and 5μm of Silicon wafers increase 22%, from 54.5% to 66.5% after coated by DLC films, which approaches the highest IR transmittance in theory. The mean IR transmittance between 3 and 5μm of the Diamond-like Carbon films deposited at laser intensity of 1.28×109W/cm2 is 65.6%.

Paper Details

Date Published: 24 August 2009
PDF: 5 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811U (24 August 2009); doi: 10.1117/12.835223
Show Author Affiliations
Yanlong Guo, Wuhan Mechanical Technology College (China)
Shuyun Wang, Wuhan Mechanical Technology College (China)
Xiaobing Wang, Wuhan Mechanical Technology College (China)
Yong Cheng, Wuhan Mechanical Technology College (China)
Huisheng Wang, Wuhan Mechanical Technology College (China)
Bin Sun, Wuhan Mechanical Technology College (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top