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Proceedings Paper

Mounting methodologies to measure EUV reticle nonflatness
Author(s): Venkata Siva Battula; Jacob R. Zeuske; Roxann L. Engelstad; Pradeep Vukkadala; Andrew R. Mikkelson; Chris K. Van Peski
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for the next-generation lithography in the sub-30 nm regime. Stringent flatness requirements have been imposed for the front and back surfaces of EUVL masks to ensure successful pattern transfer that satisfies the image placement error budget. The EUVL Mask Standard (SEMI P-37) specifies the flatness of the two mask surfaces to be approximately 50 nm peak-to-valley. It is essential to measure the mask surface nonflatness accurately (without gravitational distortions) to the extent possible. The purpose of this research was to study the various mask mounting techniques and to compare these methods for repeatability and accuracy during the measurements.

Paper Details

Date Published: 27 May 2009
PDF: 14 pages
Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747014 (27 May 2009); doi: 10.1117/12.835202
Show Author Affiliations
Venkata Siva Battula, Univ. of Wisconsin, Madison (United States)
Jacob R. Zeuske, Univ. of Wisconsin, Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin, Madison (United States)
Pradeep Vukkadala, Univ. of Wisconsin, Madison (United States)
Andrew R. Mikkelson, Univ. of Wisconsin, Madison (United States)
Chris K. Van Peski, Van Peski Consulting (United States)


Published in SPIE Proceedings Vol. 7470:
25th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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