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Proceedings Paper

EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch
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Paper Abstract

Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMATECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40~45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

Paper Details

Date Published: 27 May 2009
PDF: 7 pages
Proc. SPIE 7470, 25th European Mask and Lithography Conference, 74700Y (27 May 2009); doi: 10.1117/12.835196
Show Author Affiliations
Sungmin Huh, SEMATECH (United States)
Patrick Kearney, SEMATECH (United States)
Stefan Wurm, SEMATECH (United States)
Frank Goodwin, SEMATECH (United States)
Hakseung Han, Samsung Electronics (Korea, Republic of)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7470:
25th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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