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Proceedings Paper

Mask parameter variation in the context of the overall variation budget of an advanced logic wafer Fab
Author(s): Rolf Seltmann; Gert Burbach; Anne Parge; Jens Busch; Tino Hertzsch; Andre Poock; Francois Weisbuch; Andre Holfeld
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Paper Abstract

Within our paper we are going to discuss the variation within the patterning process in the context of the overall electrical parameter variation in an advanced logic Fab. The evaluation is based on both the variation of ring oscillators that are distributed across the chip as well as on local variation of matched transistor pairs. Starting with a view back to the 130nm technology, we will show how things and requirements changed over time. In particular we focus on the gate layer where we do a detailed ACLV-comparison from the 130nm technology node down to today's 45nm node. Within the patterning variation we keep special attention on the mask performance. Within that section, we do a detailed wafer-mask correlation analysis. Additionally to the low-MEEF gate layer we show the importance of the mask CD-performance for a typical high MEEF-layer. Finally, we discuss the mask contribution to the overall overlay error for the most critical contact to gate overlay. In all of the cases, we will show that the mask performance is not the limiter within today's most advanced technology, as long as we get access to a world class mask shop.

Paper Details

Date Published: 27 May 2009
PDF: 14 pages
Proc. SPIE 7470, 25th European Mask and Lithography Conference, 747006 (27 May 2009); doi: 10.1117/12.835166
Show Author Affiliations
Rolf Seltmann, AMD FAB LLC & Co. KG (Germany)
Gert Burbach, AMD FAB LLC & Co. KG (Germany)
Anne Parge, AMD FAB LLC & Co. KG (Germany)
Jens Busch, AMD FAB LLC & Co. KG (Germany)
Tino Hertzsch, AMD FAB LLC & Co. KG (Germany)
Andre Poock, AMD FAB LLC & Co. KG (Germany)
Francois Weisbuch, AMD FAB LLC & Co. KG (Germany)
Andre Holfeld, AMD FAB LLC & Co. KG (Germany)

Published in SPIE Proceedings Vol. 7470:
25th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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