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Proceedings Paper

Fabrication and characterization of ZnO nanowires grown on Ti substrate
Author(s): Gang Meng; Xiaodong Fang; Ruhua Tao; Weiwei Dong; Zanhong Deng; Shu Zhou
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Paper Abstract

Zinc oxide (ZnO) with a wide band gap of 3.37 eV, and a large exciton binding energy of 60 mV at room temperature, is one of the most important n-type semiconductor, that has potential applications in the area of short-wavelength optoelectronic devices, gas sensors, solar cells, and field emitters. Some advanced nanodevices based on one-dimensional (1-D) ZnO nanomaterials have been successfully demonstrated in the past few years. The types of substrate have a great influence on the properties of ZnO nanostrctural devices. Semiconductor substrates such as Si and Al2O3 were widely used for the collection or epitaxial growth of ZnO nanostructures, for metal substrate, Fe and Cu foil has also been used as substrate, there are few reports on ZnO nanowires grown on Ti foil, Ti is an important electrode metal that ohmic contact can be appropriately achieved, which is critical for semiconductor device application. Besides, both Ti and ZnO show good biocompatibility, it is expected that ZnO nanowires/ Ti show good performance on bio-sensors. In this paper, 1-D ZnO nanostructures have been successfully fabricated on the conductive Ti substrate via a vapor phase transport (VPT) method by carbothermal reduction of ZnO and graphite powder mixture in a tube furnace at 850°C. The final products were characterized by means of field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), high-solution transmission electron microscope (HRTEM) (equipped with selected area electron diffraction, SAED), and photoluminescence (PL) spectroscopy. FE SEM results show that dense, ultra-long (>10μm), and locally aligned ZnO nanowire arrays were grown on the Ti foil. The diameter of nanowires exhibits a wide range from 150 nm to about 500nm. Structural characterizations (XRD, SAED, HRTEM) indicate the as synthesized nanostructures have a ZnO wurtzite structure and are perfect single crystalline without any defects or impurities. The growth direction is [0001]. Optical property (PL spectrum) shows strong UV emission is detected in our sample.

Paper Details

Date Published: 24 August 2009
PDF: 9 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811Z (24 August 2009); doi: 10.1117/12.835037
Show Author Affiliations
Gang Meng, Anhui Institute of Optics and Fine Mechanics (China)
Xiaodong Fang, Anhui Institute of Optics and Fine Mechanics (China)
Ruhua Tao, Anhui Institute of Optics and Fine Mechanics (China)
Weiwei Dong, Anhui Institute of Optics and Fine Mechanics (China)
Zanhong Deng, Anhui Institute of Optics and Fine Mechanics (China)
Shu Zhou, Anhui Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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