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Proceedings Paper

Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxy
Author(s): Z. G. Li; M. H. You; G. J. Liu; L. Lin; M. Li; Z. L. Qiao; Y. Deng; Y. Wang; X. H. Wang
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Paper Abstract

The growth parameters affecting the deposition of InGaSb quantum dots (QDs) on GaAs substrate by molecular beam epitaxy (MBE) were reported. The InGaSb were achieved using lower growth temperature and optimized growth interruption, which is important to obtain high-quality materials Photoluminescence (PL) measurements show the good optical quality of InGaSb QDs. At room temperature, the wavelength of PL spectrum and full-width at half-maximum (FWHM) are around 1.3 m and 106 meV, respectively.

Paper Details

Date Published: 24 August 2009
PDF: 8 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811B (24 August 2009); doi: 10.1117/12.834993
Show Author Affiliations
Z. G. Li, Changchun Univ. of Science and Technology (China)
M. H. You, Air Force Aviation Univ. (China)
G. J. Liu, Changchun Univ. of Science and Technology (China)
L. Lin, Changchun Univ. of Science and Technology (China)
M. Li, Changchun Univ. of Science and Technology (China)
Z. L. Qiao, Changchun Univ. of Science and Technology (China)
Y. Deng, Changchun Univ. of Science and Technology (China)
Y. Wang, Changchun Univ. of Science and Technology (China)
X. H. Wang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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