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Proceedings Paper

Fabrication and characterization of ZnO-based UV photodetectors
Author(s): Jian Huang; Linjun Wang; Run Xu; Ke Tang; Weimin Shi; Yiben Xia
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Paper Abstract

In this work, an Al-N-co-doped p-type ZnO film was deposited on the smooth nucleaction side of freestanding diamond film by radio-frequency (RF) reactive magnetron sputtering method. An intrinsic n-type ZnO layer was deposited on the p-type Al-N-co-doped ZnO film to fabricate ZnO p-n homojunction. The electrical properties of ZnO p-n homojunction in dark condition were investigated by a Keithley 4200/SCS digital semiconductor characterization system. The result exhibited the distinct rectifying current-voltage (I-V) characteristics with a turn-on voltage of ~2.2V. The homojunction was also used for UV photodetector application. Spectral response of the detector showed a significant discrimination between UV and the visible light.

Paper Details

Date Published: 5 August 2009
PDF: 6 pages
Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738512 (5 August 2009); doi: 10.1117/12.834889
Show Author Affiliations
Jian Huang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Run Xu, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7385:
International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications

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